1 features glass passivated chip junction bipolar electrical characteristics 30000w peak pulse power capability on 10/1000us waveform excellent clamping capability repetition rate duty cycle 0.05 low incremental surge resistance . fast response time: typically less than 1.0ps from 0 volts to bv mechanical data terminal silver plated lead ,solderable per mil-std-750,method 2026 mounting position any for ca series weight 2.20.1g uni-polar bi-polar SMD30KPA17A smd30kpa17ca 17 18.99 50 1023.9 5000 29.3 smd30kpa60a smd30kpa60ca 60 67.0 5 297.1 5 102.0 smd30kpa280a 280 312.8 5 65.3 2 464.0 for bidirectional type having vrwm of 30 volts and less, the ir limit is double. mde semiconductor, inc. maximun clamping voltage @i pp v c (v) smd30kpa cell data sheet silicon-avalanche high surge diodes smd30kpa part number test curre nt i t (ma) reverse stand- off voltage v rwm (v) breakdown voltage v br (v) min. @i t peak pulse current ipp (a) reverse leakage @ v rwm i r ( a) preliminary
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